PART |
Description |
Maker |
HVV1214-025 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
AM83135-005 2897 |
Hook-Up Wire; Conductor Size AWG:20; No. Strands x Strand Size:10 x 30; Jacket Color:Yellow; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1061, CSA Type AWM; Conductor Material:Copper; Conductor Plating:Tin RoHS Compliant: Yes From old datasheet system RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
AM1214-325 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS RF & Microwave Transistors L-Band Radar Applications(用于L波段雷达脉冲输出和驱动的RF和微波晶体管)
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
BLL6H1214-500 |
LDMOS L-band radar power transistor
|
NXP Semiconductors
|
BLL6H1214LS-250 |
LDMOS L-band Radar Power Transistor
|
NXP
|
BLS6G2933S-13010 BLS6G2933S-130 BLS6G2933S-130112 |
LDMOS S-band radar power transistor
|
NXP Semiconductors N.V.
|
XAM1214-130 AM1214-130 |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
MS2228 |
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
AM81214-015 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
STMICROELECTRONICS[STMicroelectronics]
|
AM2931-110 |
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
|
SGS Thomson Microelectronics STMicroelectronics
|
HVV1214-025S |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty
|
HVVi Semiconductors, Inc.
|